2003. 7. 10 1/2 semiconductor technical data PG05HXTS6 tvs diode array for esd protection in portable electronics revision no : 0 protection in portable electronics applications.features h 350 watts peak pulse power (tp=8/20 s) h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 24a(tp=8/20 s) h unidirectional protection of five i/o lines. h low clamping voltage. h low operating and leakage current. h small package for use in portable electronics. applications h cell phone handsets and accessories. h cordless phones. h personal digital assistants (pda s) h notebooks, desktops pc & servers. h portable instrumentation. h set-top bosx, dvd player. h digital camera. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 350 w peak pulse current (tp=8/20 s) i pp 24 a operating temperature t j -55 q 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 6 - - v reverse leakage current i r v rwm =5v - - 20 a clamping voltage v c i pp =5a, tp=8/20 s - - 9.8 v i pp =24a, tp=8/20 s - - 14.5 junction capacitance c j v r =0v, f=1mhz between i/o pins and gnd - 325 400 pf downloaded from: http:///
2003. 7. 10 2/2 PG05HXTS6 revision no : 0 downloaded from: http:///
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